Datasheet > TQM6M5001

TQM6M5001

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
TRIQUINT		过程控制系统分布式控制系统 PCS GSM DCS
页数	文件大小	规格书
1页	54K
描述
3V Quad-Band GSM/EDGE 850/900 DCS/PCS Transmit Module

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TQM6M5001 数据手册

TQM6M5001

Preliminary Data Sheet

3V Quad-Band GSM/EDGE 850/900 DCS/PCS Transmit Module

Features

Functional Block Diagram

• Ultra Compact Size – 6.0x6.0x1.1mm³.

(Internal Voltages)

V1 Vcc1 Vcc2

• High System Efficiency in both modes:

GPRS: GSM850 38%, GSM900 43% ,

DCS/PCS 38%

Rx1

RX RF Output

DCS/PCS in

TX RF Input

Rx2

RX RF Output

EDGE: GSM 850 17%, GSM900 17% ,

DCS/PCS 20%

Vbs1

Vbs2

Vtx

Logic

Power

Control

Rx3

V8PSK

Vbatt

RX RF Output

• 8PSK power mode selection via Vramp

• Integrated Power and SP6T Control

• Integrated SP6T pHEMT Switch

• Free choice of Rx ports for band selection

• Integrated Low Pass Tx Harmonics Filter

• Positive Supply Voltage 3.0 to 4.5 V.

• 50 Ω Input and Output Impedances.

• GPRS Class 12 Compatible.

Vramp

Vmod_en

Rx4

RX RF Output

GSM 850/900 in

TX RF Input

ESD-

Diode

ANT

TX RF Output

RX RF Input

Product Description

The advanced quad-band multimode GSM/EDGE Transmit Module designed

for mobile handset applications provides full RF transmit functionality in a size

of only 36 mm². This module has been optimized for high EDGE efficiency and

EDGE power class E2 operating while maintaining high GSM/GPRS efficiency.

The GSM850/900 and DCS/PCS power amplifier blocks including power

control are combined with the low insertion loss quad-band pHEMT switch, Tx

harmonics filtering, integrated switch decoder, four receive ports, and full ESD

protection. This architecture eliminates the need for any PA-to-switch design

effort for phone designers. All four Rx ports are frequency independent and

allow flexible routing to the transceiver. Fabricated in high-reliability InGaP

HBT / pHEMT technology, the module supports GPRS class 12 operation and

provides 50 Ohms input and output impedances at all RF input and output

ports. The module control inputs are CMOS compatible and has no need for

an external reference voltage. With its excellent efficiency performance in all

4 bands, the power amplifier and switch module contributes to the overall talk-

time targets of next generation mobile handset designs.

• CMOS Compatible Module Control Inputs.

• High-Reliability InGaP HBT Technology

• Ruggedness 30:1.

Applications

•

GSM GPRS/EDGE Handsets and Modems

Dual-, Tri-, Quad-band Class 12 Compatible

Package Style

Preliminary Data Sheet: Subject to change without notice

For additional information and latest specifications, see our website: www.triquint.com

Revision 2.1, November 29, 2006

中文翻译

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