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TQM7M4012

更新时间: 2024-09-15 03:26:39
品牌 Logo 应用领域
TRIQUINT 放大器射频微波功率放大器过程控制系统分布式控制系统PCSGSMDCS
页数 文件大小 规格书
12页 538K
描述
3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE

TQM7M4012 数据手册

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TQM7M4012  
(Draft data sheet)  
3V Quad-Band GSM850/900 DCS/PCS Power Amplifier Module  
Description:  
Advanced quad-band, compact 3V power amplifier module  
designed for mobile handset applications. The small size  
and high performance is achieved with high-reliability  
InGaP HBT technology. The module is fully integrated,  
providing a simple 50 Ohms interface on all input and  
output ports. No external matching or bias components are  
required. Despite its very compact size, the module has  
exceptional efficiency in both bands. Band select and  
power control inputs on the module are CMOS compatible.  
Package Outline:  
Dimensions in mm / µm  
Features:  
Very compact size œ 8.75x9.55x1.32mm3.  
High efficiency œ typical GSM850 52%, E-GSM  
58%, DCS 52% , PCS 50%  
Positive supply voltage 3.1 to 5.2 V.  
50 input and output impedances.  
GPRS class 12 compatible.  
CMOS band select and power control inputs.  
High-reliability InGaP technology.  
Ruggedness 10:1.  
Top view  
Few external components.  
Very low input power levels  
GSM850/900  
DCS/PCS  
-3dBm [min]  
-5dBm [min]  
Description:  
Bottom view  
The module is a built around a highly integrated dual  
power amplifier InGaP die. By virtue of advanced design  
techniques, exceptional performance is achieved with four  
stages in each amplifier. On-die interstage matching is  
employed using a high Q passives technology. Together  
these technologies allow an extremely compact size to be  
achieved with excellent electrical performance. The  
module includes a CMOS die to implement a band-select  
function and Internal Power Control, avoiding additional  
external components like directional coupler, detector  
diode and operational amplifier. The module construction  
is a low-profile overmolded land-grid array on laminate.  
Copyright © 2003 TriQuint Semiconductor Inc., All rights reserved (Rev 104 2003-09-05)  
All specifications subject to change without notice  
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