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TQM7M4006_07

更新时间： 2024-11-25 03:26:39
品牌 Logo 应用领域
TRIQUINT 放大器功率放大器过程控制系统分布式控制系统PCSGSMDCS
页数 文件大小 规格书
13页 285K
描述
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

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TQM7M4006  
DATASHEET  
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module  
Features  
Functional Block Diagram  
•
•
•
Very compact size – 5×5×1.1 mm3.  
Positive supply voltage – 3.0 to 4.5 V.  
DCS / PCS in  
DCS / PCS Out  
Band Select  
High efficiency – typical GSM850 52%,  
GSM900 57%, DCS 51%, PCS 51%.  
Logic  
TX_EN  
VCC  
VBATT  
•
•
•
•
•
•
•
CMOS internal closed-loop power control.  
>55 dB dynamic control range.  
GPRS class 12 compatible.  
VRAMP  
Power Control  
GSM 850 / 900 IN  
GSM 850 / 900 Out  
High-reliability InGaP technology.  
Ruggedness 10:1.  
Product Description  
50 Ω input and output impedances.  
Few external components  
The TQM7M4006 is an advanced, quad-band, ultra-compact, 3V power amplifier  
module designed for mobile handset applications. The module sets new  
standards in performance and size by employing the latest technologies in HBT  
power amplifier design, laminate design and CuFlip™ assembly technology. High-  
reliability is assured by InGaP HBT technology. This fully integrated module, in a  
minimal form factor, provides a simple 50 Ω interface on all input and output ports.  
It includes internal power control with wide dynamic range, and on-board  
reference voltage. No external matching or bias components are required.  
Despite its very compact size, the module has exceptional efficiency in all bands.  
Applications  
•
•
GSM handsets  
GSM wireless cards and data links  
Package Style  
Incorporates two highly-integrated InGaP power amplifier die, a GaAs high Q  
passive matching die with a CMOS controller. All die are CuFlip™ mounted to  
minimize thermal excursions. Each amplifier has three gain stages with interstage  
matching implemented with a high Q passives technology for optimal  
performance. The CMOS controller implements a fully integrated power control  
circuit within the module, eliminating the need for external detection to assure the  
output power level. The latter is set directly from the Vramp input from the DAC. The  
module has Tx enable and band select inputs and a highly-stable on-board  
reference voltage. Excellent performance is achieved across the 824 – 849 MHz,  
880 – 915 MHz, 1710 – 1785 MHz, and 1850 – 1910 MHz bands. Module  
construction is a low-profile overmolded land-grid array on laminate.  
Package Size: LGA 5 x 5 x 1.1 mm3  
Top View  
Vcc2D  
RF_in_DCS  
RF_out_DCS  
BS  
Tx_En  
Gnd  
Vcc3  
Vbatt  
RF_out_GSM  
Vramp  
Electrical Specifications  
Parameter  
850 Band  
900 Band  
DCS / PCS Band  
Units  
RF_in_GSM  
Min  
Typ  
Max  
Min Typ  
Max  
Min  
Typ  
Max  
Vcc2G  
GSM Pout  
Efficiency  
Pin  
34.2  
44  
35  
52  
5
34.2  
50  
35  
57  
5
32.5/32 33/32.5  
dBm  
%
44/44  
1.5  
51/51  
5
1.5  
8
1.5  
8
8
dBm  
2
All specifications subject to change without notice  
For additional information and latest specifications, see our website: www.triquint.com  
February 22, 2006 (Rev. E)  
1234567...13

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