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TQ7625

更新时间: 2024-11-21 03:26:39
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描述
3V HBT TDMA Power Amplifier IC

TQ7625 数据手册

  
Advance Product Information  
WIRELESS COMMUNICATIONS DIVISION  
Preliminary: Subject to change without notice  
3V HBT TDMA Power Amplifier IC  
TQ7625  
Selected Electrical Characteristics  
Test Conditions: VCC = +3.5 V, TC = 25°C, VBIAS=2.75V  
Primary Application(s)  
Parameter  
Min.  
Typ.  
Max.  
Units  
MHz  
dBm  
%
IS-136 Mobile Phones  
Usable Frequency Range  
TDMA Output Power  
TDMA Power Added Efficiency  
ACP, Pout = +28 dBm  
ALT, Pout = +28 dBm  
Large Signal Gain  
1850  
1910  
28  
40  
Dual Band Mobile phones  
-30  
-53  
27.5  
26  
dBc  
Key Features  
dBc  
High Efficiency  
dB  
Low Quiescent Current,  
Mode Selectable  
Small Signal Gain (Vmode=low)  
Receive Band Noise  
dB  
-92  
60  
dBm/30KHz  
mA  
Quiescent Current,  
uses Vmode  
Vmode= low  
Vmode= high  
Small size 3x3 mm leadless package  
Few external components  
Excellent ACP Performance  
Single +2.7V Supply  
80  
mA  
Switching  
Vmode, Externally  
Switched.  
POUT <=+15dBm  
POUT =+28dBm  
0
0
0.3  
V
2.65  
2.75  
-45  
-55  
2.85  
V
Second Harmonic, POUT =+28dBm  
Third Harmonic, POUT =+28dBm  
dBc  
dBc  
Package: 3x3 mm  
Application Circuit, US PCS Band  
Leadless 16 pin  
VCC 2  
3.0 mm  
VCC 1  
VCC1  
GND  
GND GND GND  
RFOUT  
16  
15  
14  
13  
RF Input  
50 OhmLine  
RFIN  
GND  
RFOUT  
RFOUT  
RF Output  
1
2
3
4
12  
11  
10  
9
TQ7625  
50 Ohm  
VREG  
RFOUT  
GND  
V REG  
Vbias Vmode  
GND  
Bypass  
Vbias  
Vmode  
5
6
7
8
TQS Wireless Communications  
2300 NE Brookwood Parkway  
Hillsboro, OR 97124  
(503) 615-9000  
FAX:(503) 615-8900  
05/17/01 REV. 4  

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