Datasheet > TPW1R104PB

TPW1R104PB

更新时间： 2023-12-20 18:46:02

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
12页	635K
描述
N-ch MOSFET, 40 V, 120 A, 0.00114 Ω@10V, DSOP Advance(WF)M

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TPW1R104PB 数据手册

TPW1R104PB

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPW1R104PB

1. Applications

•

Automotive

Motor Drivers

Switching Voltage Regulators

2. Features

(1) AEC-Q101 qualified

(2) Small, thin package

(3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

DSOP Advance(WF)M

Start of commercial production

2018-08

2020-06-24

Rev.8.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...12

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