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TPW50R060C PDF预览

TPW50R060C

更新时间: 2024-11-03 17:01:07
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP /
页数 文件大小 规格书
8页 359K
描述
超结功率 MOSFET(Super Junction MOSFET)是一种新型功率器件,采用基于电荷平衡的器件结构,导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率,目前国际上Infi

TPW50R060C 数据手册

 浏览型号TPW50R060C的Datasheet PDF文件第2页浏览型号TPW50R060C的Datasheet PDF文件第3页浏览型号TPW50R060C的Datasheet PDF文件第4页浏览型号TPW50R060C的Datasheet PDF文件第5页浏览型号TPW50R060C的Datasheet PDF文件第6页浏览型号TPW50R060C的Datasheet PDF文件第7页 
TPV50R060C, TPW50R060C  
Wuxi Unigroup Microelectronics Company  
500V Super-Junction Power MOSFET  
FEATURES  
Very low FOM RDS(on)×Qg  
100% avalanche tested  
RoHS compliant  
APPLICATIONS  
Switch Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Power Factor Correction (PFC)  
Device Marking and Package Information  
Device  
Package  
TO-3PN  
TO-247  
Marking  
50R060C  
50R060C  
TPV50R060C  
TPW50R060C  
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted  
Parameter  
Symbol  
VDSS  
ID  
Value  
500  
Unit  
V
Drain-Source Voltage (VGS = 0V)  
Continuous Drain Current  
Pulsed Drain Current  
47  
A
(note1)  
IDM  
141  
A
Gate-Source Voltage  
VGSS  
EAS  
±30  
1120  
15  
V
Single Pulse Avalanche Energy  
Avalanche Current  
(note2)  
(note1)  
(note1)  
mJ  
A
IAR  
Repetitive Avalanche Energy  
Power Dissipation (TC = 25ºC)  
Operating Junction and Storage Temperature Range  
EAR  
1.76  
390  
mJ  
W
ºC  
PD  
TJ, Tstg  
-55~+150  
Thermal Resistance  
Parameter  
Symbol  
RthJC  
Value  
0.32  
62  
Unit  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
K/W  
RthJA  
V3.0  
www.tsinghuaicwx.com  
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