Datasheet > TPW1R306PL

TPW1R306PL

更新时间： 2024-11-19 14:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	585K
描述
N-ch MOSFET, 60 V, 0.00129 Ω@10V, DSOP Advance, U-MOSⅨ-H

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TPW1R306PL 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

TPW1R306PL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPW1R306PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 22 nC (typ.)

(3) Small output charge: Qoss = 77.5 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

DSOP Advance

Start of commercial production

2016-10

2019-10-21

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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