M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
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ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
TPT5609
Micro Commercial Components
Features
ꢀꢁ Excellent linearity of Current Gain
ꢀꢁ Low saturation voltage
NPN Epitaxial
Silicon Transistor
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
20
25
5.0
1.0
Unit
V
V
V
A
TO-92L
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
0.75
-55 to +150
-55 to +150
W
OC
OC
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVCBO
BVCEO
Collector-Base Breakdown Voltage
(IC=10ČAdc, IE=0)
25
20
---
---
---
---
Vdc
Vdc
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
BVEBO
ICBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=20Vdc,IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
5.0
---
---
---
---
---
1
Vdc
uAdc
uAdc
IEBO
---
1
B
C
E
ON CHARACTERISTICS
hFE
VBE(on)
VCE(sat)
fT
DC Current gain
(IC=500mAdc, VCE=2.0Vdc)
Base-Emitter On Voltage
(VCE=2.0Vdc, IC=500mAdc)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
Current Gain Bandwidth Product
(VCE=2.0Vdc, IC=500mAdc)
Output Capacitance
60
---
---
---
---
---
240
---
---
---
1.0
0.5
---
Vdc
Vdc
MHz
pF
DIMENSIONS
190
22
INCHES
MAX
4.100
MM
DIM
A
MIN
3.700
4.000
0.000
0.350
1.280
4.700
7.800
13.80
.600
MIN
.146
.157
0.000
.014
.050
.185
.307
.543
.024
.014
MAX
.161
---
NOTE
Cob
---
B
---
(VCB=10Vdc, IE=0, f=1.0MHz)
C
D
E
0.300
0.450
1.580
5.100
8.200
14.20
.800
0.012
.018
.062
.201
.323
.559
.031
.022
CLASSIFICATION OF hFE
F
G
H
J
Rank
Range
A
B
C
60-120
85-170
120-240
K
0.350
.550
L
1.270
.050
M
2.440
2.640
.096
.104
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Revision: 1
2007/12/14