Datasheet > TPN11006NL(TE12L1)

TPN11006NL(TE12L1)

更新时间： 2024-11-09 15:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	234K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,37A I(D),LLCC

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TPN11006NL(TE12L1) 技术参数

TPN11006NL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN11006NL

1. Applications

•

Switching Voltage Regulators

DC-DC Converters

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 6.4 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

2013-05-13

Rev.1.0

12 3 4 5 6 7...9

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