Datasheet > TPN12008QM

TPN12008QM

更新时间： 2024-11-06 21:15:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	490K
描述
Power Field-Effect Transistor

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中文翻译

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TPN12008QM 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

TPN12008QM

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN12008QM

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 6.5 nC (typ.)

(3) Small output charge: Qoss = 21.1 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2020-02

2020-02-18

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

中文翻译

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