Datasheet > TPN19008QM

TPN19008QM

更新时间： 2024-10-03 14:57:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	511K
描述
N-ch MOSFET, 80 V, 0.019 Ω@10V, TSON Advance, U-MOSⅩ-H

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TPN19008QM 数据手册

TPN19008QM

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN19008QM

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 5.5 nC (typ.)

(3) Small output charge: Qoss = 16.5 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 14.7 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2019-09

2019-10-21

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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