Datasheet > TPN11006PL

TPN11006PL

更新时间： 2024-11-07 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	452K
描述
N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H

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TPN11006PL 数据手册

TPN11006PL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN11006PL

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 5.8 nC (typ.)

(3) Small output charge: Qoss = 14.4 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2016-07

2016-09-20

Rev.1.0

12 3 4 5 6 7...9

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