Datasheet > TPHR6503PL1

TPHR6503PL1

更新时间： 2024-11-16 21:10:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	586K
描述
Power Field-Effect Transistor

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TPHR6503PL1 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

TPHR6503PL1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPHR6503PL1

1. Applications

•

High-Efficiency DC-DC Converters

•

Switching Voltage Regulators

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 30 nC (typ.)

(3) Small output charge: Qoss = 81.3 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(N)

Start of commercial production

2019-09

2019-10-18

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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