Datasheet > TPHR9003NL

TPHR9003NL

更新时间： 2024-11-05 21:16:15

品牌	Logo	应用领域
东芝 - TOSHIBA		开关脉冲光电二极管晶体管
页数	文件大小	规格书
9页	227K
描述
Nch VDSS≤30V

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中文翻译

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技术参数
数据手册

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TPHR9003NL 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, S-PDSO-F5
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	2.05	雪崩能效等级（Eas）：	889 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	60 A
最大漏源导通电阻：	0.0014 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	S-PDSO-F5	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	200 A	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TPHR9003NL 数据手册

TPHR9003NL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPHR9003NL

1. Applications

•

Switching Voltage Regulators

•

DC-DC Converters

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 16 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 4.5 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

220

(Silicon limit)

(Tc = 25 )

(t = 1 ms)

(Note 1), (Note 2)

(Note 1)

IDP

200

(Tc = 25 )

(t = 10 s)

(Note 3)

(Note 4)

(Note 5)

2.8

(t = 10 s)

1.6

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Tch

Tstg

889

Channel temperature

Storage temperature

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-03-01

Rev.1.0

12 3 4 5 6 7...9

中文翻译

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