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TPHR8504PL PDF预览

TPHR8504PL

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 610K
描述
N-ch MOSFET, 40 V, 0.00085 Ω@10V, SOP Advance, U-MOSⅨ-H

TPHR8504PL 数据手册

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TPHR8504PL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPHR8504PL  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 23 nC (typ.)  
(3) Small output charge: Qoss = 85.4 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 0.7 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)  
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance(N)  
The package can be selected according to your preference. For details, please contact your TOSHIBA sales  
representative.  
Start of commercial production  
2014-06  
©2016-2019  
Toshiba Electronic Devices & Storage Corporation  
2019-10-24  
Rev.5.0  
1

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