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TPHR9203PL1 PDF预览

TPHR9203PL1

更新时间: 2024-11-06 14:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 589K
描述
N-ch MOSFET, 30 V, 0.00092 Ω@10V, SOP Advance(N), U-MOSⅨ-H

TPHR9203PL1 数据手册

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TPHR9203PL1  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPHR9203PL1  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 19 nC (typ.)  
(3) Small output charge: Qoss = 51 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 0.61 m(typ.) (VGS = 10 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.5 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP Advance(N)  
Start of commercial production  
2020-04  
©2019-2020  
2020-06-26  
Rev.2.0  
1
Toshiba Electronic Devices & Storage Corporation  

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