Datasheet > TPHR9003NL1

TPHR9003NL1

更新时间： 2024-11-13 14:57:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	484K
描述
N-ch MOSFET, 30 V, 0.0009 Ω@10V, SOP Advance(N), U-MOSⅧ-H

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TPHR9003NL1 数据手册

TPHR9003NL1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPHR9003NL1

1. Applications

•

High-Efficiency DC-DC Converters

•

Switching Voltage Regulators

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 16 nC (typ.)

(3) Small output charge: Qoss = 74 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 0.77 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(N)

Start of commercial production

2020-03

2020-06-26

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

中文翻译

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