TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
600
--
--
--
--
1
V
VDS = 600V, VGS = 0V, TJ = 25ºC
Zero Gate Voltage Drain Current
IDSS
μA
V
DS = 600V, VGS = 0V, TJ = 150ºC
--
--
100
±100
4.0
0.58
--
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Forward Transconductance (Note3)
Dynamic
IGSS
VGS(th)
RDS(on)
gfs
V
GS = ±30V
--
--
nA
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
2.5
--
--
0.5
5
Ω
S
--
Input Capacitance
Ciss
Coss
Crss
Qg
--
--
--
--
--
--
--
--
--
--
587
31
--
--
--
--
--
--
--
--
--
--
V
GS = 0V,
Output Capacitance
VDS = 50V,
f = 1.0MHz
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
4
14.5
3
V
DD = 480V, ID = 7A,
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VGS = 10V
5.2
39
Turn-on Delay Time
Turn-on Rise Time
25
V
DD = 400V, ID = 7A,
ns
RG = 25Ω
Turn-off Delay Time
td(off)
tf
100
18
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
trr
--
--
--
--
--
--
--
--
6.3
19
1.2
--
TC = 25ºC
A
TJ = 25ºC, ISD = 7A, VGS = 0V
0.9
250
2.1
16
V
ns
μC
A
Reverse Recovery Time
VR = 480V, IF = IS,
diF/dt = 100A/μs
Reverse Recovery Charge
Qrr
Irrm
--
Peak Reverse Recovery Current
--
Notes
1. Repetitive Rating: Pulse Width limited by maximum junction temperature
2. IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V3.0
www.tsinghuaicwx.com
2