Datasheet > TPD65R600C

TPD65R600C

更新时间： 2024-11-17 15:17:27

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
13页	765K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPD65R600C 数据手册

TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C

Wuxi Unigroup Microelectronics Company

650V Super-Junction Power MOSFET

FEATURES

 Very low FOM R_DS(on)×Q_g

 100% avalanche tested



RoHS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

Device Marking and Package Information

Device

TPA65R600C

TPB65R600C

TPC65R600C

TPD65R600C

TO-252

TPP65R600C

TO-220

TPU65R600C

TO-251

Package

Marking

TO-220F

TO-263

TO-262

65R600C

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Value

Parameter

Symbol

Unit

TO-220, TO-251, TO-252

TO-220F

TO-262, TO-263

Drain-Source Voltage (V_GS= 0V)

V_DSS

650

T_C= 25ºC

T_C= 100ºC

Continuous Drain Current

I_D

4.2

I_DM

V_GSS

E_AS

Pulsed Drain Current

Gate-Source Voltage

(note1)

±30

162

1.4

Single Pulse Avalanche Energy

Avalanche Current

(note2)

(note1)

I_AS

MOSFET dv/dt ruggedness, V_DS= 0...480V

Reverse diode dv/dt, V_DS= 0…480V, I_SD≤ I_D

Power Dissipation (T_C= 25ºC )

dv/dt

P_D

V/ns

Operating Junction and Storage Temperature Range

Thermal Resistance

Parameter

T_J, T_stg

-55~+150

ºC

Value

Symbol

Unit

TO-220, TO-251, TO-252

TO-262, TO-263

TO-220F

4.5

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R_thJC

R_thJA

2.0

ºC/W

V3.2

www.tsinghuaicwx.com

12 3 4 5 6 7...13

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