Datasheet > TPD65R940C

TPD65R940C

更新时间： 2024-09-24 17:01:23

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
13页	765K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TPD65R940C 数据手册

TPA65R940C, TPB65R940C, TPC65R940C, TPD65R940C, TPP65R940C, TPU65R940C

Wuxi Unigroup Microelectronics Company

650V Super-Junction Power MOSFET

FEATURES

 Very low FOM R_DS(on)×Q_g

 100% avalanche tested



RoHS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

Device Marking and Package Information

Device

TPA65R940C

TPB65R940C

TPC65R940C

TPD65R940C

TO-252

TPP65R940C

TO-220

TPU65R940C

TO-251

Package

Marking

TO-220F

TO-263

TO-262

65R940C

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Value

Parameter

Symbol

Unit

TO-220, TO-251, TO-252

TO-220F

TO-262, TO-263

Drain-Source Voltage (V_GS= 0V)

V_DSS

I_D

650

T_C= 25ºC

T_C= 100ºC

Continuous Drain Current

2.4

I_DM

V_GSS

E_AS

±30

52.8

0.8

Pulsed Drain Current

Gate-Source Voltage

(note1)

Single Pulse Avalanche Energy

Avalanche Current

(note2)

(note1)

I_AS

MOSFET dv/dt ruggedness, V_DS= 0...480V

Reverse diode dv/dt, V_DS= 0…480V, I_SD≤ I_D

Power Dissipation (T_C= 25ºC )

dv/dt

P_D

V/ns

Operating Junction and Storage Temperature Range

T_J, T_stg

-55~+150

ºC

Thermal Resistance

Value

Parameter

Symbol

Unit

TO-220, TO-251, TO-252

TO-262, TO-263

TO-220F

5.5

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R_thJC

R_thJA

4.4

ºC/W

V3.2

www.tsinghuaicwx.com

12 3 4 5 6 7...13

中文翻译

下载PDF

与TPD65R940C相关器件

型号	品牌	获取价格	描述	数据表
TPD65R950M	WUXI UNIGROUP	获取价格	Multi-EPI超结功率MOSFET(Multi-EPI Super Junction
TPD68A12	ETC	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE\|90V V(BO) MAX\|300MA I(S)\|TO-220
TPD68A18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,90V V(BO) MAX,300MA I(S),TO-220
TPD68B12	ETC	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE\|82V V(BO) MAX\|300MA I(S)\|TO-220
TPD68B18	STMICROELECTRONICS	获取价格	SINGLE UNIDIRECTIONAL BREAKOVER DIODE,82V V(BO) MAX,300MA I(S),TO-220
TPD6E001	TI	获取价格	LOW-CAPACITANCE 6-CHANNEL 【15-kV ESD-PROTECTI
TPD6E001_09	TI	获取价格	LOW-CAPACITANCE 6-CHANNEL ±15-kV ESD-PROTECTI
TPD6E001_10	TI	获取价格	LOW-CAPACITANCE 6-CHANNEL ±15-kV ESD-PROTECTI
TPD6E001RSER	TI	获取价格	LOW-CAPACITANCE 6-CHANNEL 【15-kV ESD-PROTECTI
TPD6E001RSERG4	TI	获取价格	LOW-CAPACITANCE 6-CHANNEL 【15-kV ESD-PROTECTI