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TPCP8102 PDF预览

TPCP8102

更新时间: 2024-02-22 14:52:50
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 238K
描述
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS コ)

TPCP8102 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
包装说明:2-3V1K, 8 PIN针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.29Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):7.2 A最大漏极电流 (ID):7.2 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8JESD-609代码:e0
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.68 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPCP8102 数据手册

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TPCP8102  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Thermal resistance, channel to ambient (t = 5 s)  
R
74.4  
°C/W  
th (ch-a)  
th (ch-a)  
(Note 2a)  
Thermal resistance, channel to ambient (t = 5 s)  
R
148.8 °C/W  
(Note 2b)  
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.  
Note 2: (a) Device mounted on a glass-epoxy board (a)  
(b) Device mounted on a glass-epoxy board (b)  
FR-4  
FR-4  
25.4 × 25.4 × 0.8  
(Unit: mm)  
25.4 × 25.4 × 0.8  
(Unit: mm)  
(a)  
(b)  
Note 3:  
V
DD  
= -16 V, T = 25°C (initial), L = 0.5 mH, R = 25 Ω, I  
= -7.2 A  
AR  
ch  
G
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.  
Note 5: on the lower left of the marking indicates Pin 1.  
* Weekly code (three digits):  
Week of manufacture  
(01 for the first week of the year, continuing up to 52 or 53)  
Year of manufacture  
(The last digit of the calendar year)  
2
2006-11-17  

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