Datasheet > TP10K40

TP10K40

更新时间： 2024-09-19 23:37:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	343K
描述
TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 400V V(BR)CEO \| 10A I(C) \| TO-225VAR

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中文翻译

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数据手册

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TP10K40 数据手册

SHINDENGEN

DarlingtonTransistor

OUTLINE DIMENSIONS

Case : ITO-220

2SD1795

(TP10K40)

Unit : mm

10A NPN

RATINGS

Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

V_CBO

V_CEO

V_EBO

I_C

-55`+150

+150

500

Junction Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

400

Collector Current Peak

Base Current DC

I_CP

I_B

0.5

1.0

Base Current Peak

I_BP

Total Transistor Dissipation

Dielectric Strength

P_T

Vdis

TOR

Tc = 25

0.5

Terminals to case AC 1 minute

(Recommended torque : 0.3N¥mj

Mounting Torque

N¥m

Electrical Characteristics (Tc=25)

Item

Symbol

V_CEO

I_CBO

Conditions

V_CE(Clamp)

V_CB= 500V

Ratings

Min 400

Max 0.1

Max 100

Min 150

Max 1.5

Max 2.0

Max 2.5

TYP 10

Max 2

Unit

Collector to Emitter Sustaining Voltage

Collector Cutoff Current

I_CEO

V_CE= 400V

Emitter Cutoff Current

DC Current Gain

I_EBO

V_EB= 12V

h_FE

V_CE= 2V, I_C= 7A

I_C= 7A

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Thermal Resistance

V_CE(sat)

V_BE(sat)

Æjc

I_B= 70mA

Junction to case

V_CE= 10V, I_C= 1A

MHz

Transition Frequency

f_T

Turn on Time

ton

I_C= 7A

Storage Time

Fall Time

I_B1= I_B2= 70mA

R_L= 10¶

V_BB2= 4V

Max 15

Ês

12 3 4 5 6 7...9

中文翻译

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