Datasheet > TP10S8

TP10S8

更新时间： 2024-09-19 23:37:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
8页	298K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| TO-127VAR

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中文翻译

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数据手册

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TP10S8 数据手册

SHINDENGEN

Switching Power Transistor

HSV Series

OUTLINE DIMENSIONS

Case : ITO-220

2SC4982

(TP10S8)

Unit : mm

10A NPN

RATINGS

Absolute Maximum Ratings

Item

Storage Temperature

Symbol

Conditions

Ratings

-55`150

Unit

Tstg

V_CBO

V_CEO

V_EBO

I_C

Junction Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

150

100

Collector Current Peak

Base Current DC

I_CP

I_B

1.5

Base Current Peak

I_BP

Total Transistor Dissipation

Dielectric Strength

P_T

Tc = 25

0.5

Terminal to case, AC 1 minute

(Recommended torque : 0.3N¥mj

Vdis

TOR

Mounting Torque

N¥m

Electrical Characteristics (Tc=25)

Item

Conditions

I_C= 0.1A

Symbol

V_CEO(sus)

I_CBO

Ratings

Min 80

Unit

Collector to Emitter Sustaining Voltage

Collector Cutoff Current

At rated Voltage

Max 0.1

Min 70

I_CEO

Emitter Cutoff Current

DC Current Gain

At rated Voltage

V_CE= 2V, I_C= 5A

I_C= 5A

I_EBO

h_FE

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Thermal Resistance

V_CE(sat)

V_BE(sat)

Æjc

Max 0.3

Max 1.2

Max 5

I_B= 0.25A

Junction to case

V_CE= 10V, I_C= 1A

MHz

Transition Frequency

f_T

ton

TYP 50

Max 0.3

Turn on Time

I_C= 5A

Storage Time

Fall Time

I_B1= 0.5A, I_B2= 0.5A

R_L= 5¶, V_BB2= 4V

Max 1.5

Max 0.2

Ês

12 3 4 5 6 7 8

中文翻译

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