Datasheet > TP0610T

TP0610T

更新时间： 2023-12-06 20:03:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	1516K
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure

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TP0610T 数据手册

TP0610T

P-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• High Input Impedance and High Gain

• Low Power Drive Requirement

• Ease of Paralleling

The TP0610T is a low-threshold, Enhancement-mode

(normally-off) transistor that utilizes a vertical DMOS

structure and a well-proven silicon gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

• Low C_ISSand Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• Free from Secondary Breakdown

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photo-Voltaic Drives

• Analog Switches

• Power Management

• Telecommunication Switches

Package Type

3-lead SOT-23 (TO-236AB)

(Top view)

DRAIN

SOURCE

GATE

See Table 3-1 for pin information.

 2019-2020 Microchip Technology Inc.

DS20005701B-page 1

12 3 4 5 6 7...14

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TP0610T-G	SUPERTEX	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610TT1	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格