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TP0101K-T1-GE3 PDF预览

TP0101K-T1-GE3

更新时间: 2024-11-25 12:49:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 231K
描述
P-Channel 20-V (D-S) MOSFET, Low-Threshold

TP0101K-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.64配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):0.58 A
最大漏极电流 (ID):0.58 A最大漏源导通电阻:0.65 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TP0101K-T1-GE3 数据手册

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TP0101K  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET, Low-Threshold  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Available  
I
D (A)e  
VDS (V)  
RDS(on) (Ω)  
0.65 at VGS = - 4.5 V  
0.85 at VGS = - 2.5 V  
- 0.58  
- 0.5  
TrenchFET® Power MOSFET  
- 20  
ESD Protected: 3000 V  
APPLICATIONS  
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories  
Battery Operated Systems, DC/DC Converters  
Power Supply Converter Circuits  
Load/Power Switching-Cell Phones, Pagers  
D
TO-236  
(SOT-23)  
Marking Code: K4ywl  
100 Ω  
G
S
1
3
2
G
K4 = Part Number Code for TP0101K  
D
y = Year Code  
w = Week Code  
l = Lot Traceability  
Top View  
S
Ordering Information:  
TP0101K-T1-E3 (Lead (Pb)-free)  
TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 20  
8
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 0.58  
- 0.46  
- 2  
Continuous Drain Current (TJ = 150 °C)b  
ID  
A
Pulsed Drain Currenta  
Continuous Source-Drain (Diode Current)b  
IDM  
IS  
- 0.3  
0.35  
TA = 25 °C  
TA = 70 °C  
Power Dissipationb  
PD  
W
0.22  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
Notes:  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 board, t 10 s.  
THERMAL RESISTANCE RATINGS  
Parameter  
Thermal Resistance, Junction-to-Ambientb  
Symbol  
RthJA  
Limits  
Unit  
357  
°C/W  
Notes:  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 board, t 10 s.  
Document Number: 72692  
S-83053-Rev. B, 29-Dec-08  
www.vishay.com  
1

TP0101K-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
NTR0202PLT1G ONSEMI

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