生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.65 | 其他特性: | LOW THRESHOLD |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.65 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TP0101TST1 | VISHAY |
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1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN | |
TP0101TST1 | TEMIC |
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Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
TP0101TS-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
TP0101TS-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
TP0101TST2 | TEMIC |
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Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
TP0101TT1 | VISHAY |
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600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN | |
TP0101T-T1 | ETC |
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TRANSISTOR SOT23 SMD MOSFET | |
TP0101T-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
TP0101TT2 | TEMIC |
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Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
TP0102N2 | SUPERTEX |
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Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal |