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TP0101T-T1 PDF预览

TP0101T-T1

更新时间: 2024-11-24 23:37:07
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 69K
描述
TRANSISTOR SOT23 SMD MOSFET

TP0101T-T1 数据手册

 浏览型号TP0101T-T1的Datasheet PDF文件第2页浏览型号TP0101T-T1的Datasheet PDF文件第3页浏览型号TP0101T-T1的Datasheet PDF文件第4页 
TP0101T  
P-Channel Enchancement-Mode MOSFET  
Product Summary  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.65 @ V = –4.5 V  
–0.5  
–0.4  
GS  
–12  
0.85 @ V = –2.5 V  
GS  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
TP0101T (P0)*  
*Marking Code for TO-236  
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–12  
"8  
DS  
GS  
V
T = 25_C  
–0.5  
A
b
Continuous Drain Current (T = 150_C)  
I
J
D
T = 70_C  
A
–0.39  
–3  
A
a
Pulsed Drain Current  
I
DM  
b
Continuous Source Current (Diode Conduction)  
I
–0.5  
S
T = 25_C  
0.23  
A
b
Power Dissipation  
P
W
D
T = 70_C  
A
0.15  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Unit  
b
Maximum Junction-to-Ambient  
R
thJA  
550  
_C/W  
Notes  
a. Pulse width limited by maximum junction temperature.  
b. Surface Mounted on FR4 Board, t v 10 sec.  
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document  
#2833. A SPICE Model data sheet is available for this product (FaxBack document #5154).  
Siliconix  
1
S-44205—Rev. A, 31-Mar-95  
New Product  

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