2SJ313-Y

更新时间： 2024-02-18 09:14:15

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率场效应晶体管放大器局域网
页数	文件大小	规格书
5页	372K
描述
TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

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技术参数
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2SJ313-Y 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

2SJ313-Y 数据手册

2SJ313

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ313

Audio Frequency Power Amplifier Application

Unit: mm

z High breakdown voltage: V

= −180 V

DSS

z High forward transfer admittance: |Y | = 0.7 S (typ.)

z Complementary to 2SK2013

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−180

±20

DSS

JEDEC

JEITA

―

Gate−source voltage

Drain current

GSS

(Note 1)

−1

SC-67

Power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

°C

stg

TOSHIBA

2-10R1B

150

Weight: 1.9 g (typ.)

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2006-11-16

12 3 4 5

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