Datasheet > TND322VD-TL-H

TND322VD-TL-H

更新时间： 2024-09-16 11:14:19

品牌	Logo	应用领域
安森美 - ONSEMI		驱动驱动器
页数	文件大小	规格书
7页	974K
描述
优秀电源器件，双缓冲器驱动器，适用于通用型应用

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中文翻译

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技术参数
数据手册

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TND322VD-TL-H 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.66	Base Number Matches：	1

TND322VD-TL-H 数据手册

TND322VD

Excellent Power Device

Dual buffer driver for general purpose

www.onsemi.com

Features

•

Dual buffer

•

Monolithic structure (High voltage CMOS process adopted)

•

Withstand voltage of 25V is assured

•

Wide range of operating voltage : 4.5V to 25V

•

–

Peak output current : I +/I =0.8A /1A

•

Fast switching time (30ns typical at 1000pF load )

Fully compatible input to TTL / CMOS (V =up to 2.6V, at V =4.5 to 25V)

Built-in input pull-down resistance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

0 to 25

Unit

Supply Voltage

Input Voltage

GND--0.3 to V +0.3

Allowable Power Dissipation

Junction Temperature

Storage Temperature

max

0.2

--55 to +150

Tstg

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Packing Type : TL

Pin Assignment

TND322VD-TL-E

TND322VD-TL-H

1 : INA

2 : OUTA

3 : OUTB

4 : INB

5 : GND

6 : VDD

7 : VDD

8 : VDD

Marking

Top View

LOT No.

SOT-28FL / VEC8

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of this data sheet.

©Semiconductor Components Industries, LLC, 2015

Publication Order Number:

TND322VD/D

February 2015 - Rev. 1

12 3 4 5 6 7

中文翻译

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