Datasheet > TND323VD-TL-H

TND323VD-TL-H

更新时间： 2024-09-15 20:02:03

品牌	Logo	应用领域
安森美 - ONSEMI		驱动接口集成电路
页数	文件大小	规格书
7页	646K
描述
Excellent Power Device, Inverter and Buffer Driver for General Purpose, 3000-REEL

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中文翻译

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技术参数
数据手册

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TND323VD-TL-H 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.68	接口集成电路类型：	HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

TND323VD-TL-H 数据手册

TND323VD

Excellent Power Device

Inverter and buffer driver for general purpose

www.onsemi.com

Features

•

Inverter buffer

•

Monolithic structure (High voltage CMOS process adopted)

•

Withstand voltage of 25V is assured

•

Wide range of operating voltage : 4.5V to 25V

•

–

Peak output current : I +/I =0.8A /1A

•

Fast switching time (30ns typical at 1000pF load)

Fully compatible input to TTL / CMOS (V =up to 2.6V, at V =4.5 to 25V)

Built-in input pull-down resistance

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

0 to 25

Unit

Supply Voltage

Input Voltage

GND--0.3 to V +0.3

Allowable Power Dissipation

Junction Temperature

Storage Temperature

max

0.2

--55 to +150

Tstg

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Packing Type : TL

Pin Assignment

TND323VD-TL-E

TND323VD-TL-H

1 : INA

2 : OUTA

3 : OUTB

4 : INB

Marking

5 : GND

6 : VDD

7 : VDD

8 : VDD

Top View

LOT No.

SOT-28FL / VEC8

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of this data sheet.

©Semiconductor Components Industries, LLC, 2015

Publication Order Number:

TND323VD/D

March 2015 - Rev. 2

12 3 4 5 6 7

中文翻译

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