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TN6729A PDF预览

TN6729A

更新时间: 2024-09-18 22:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管开关
页数 文件大小 规格书
4页 111K
描述
PNP General Purpose Amplifier

TN6729A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-226
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-226AE
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN6729A 数据手册

 浏览型号TN6729A的Datasheet PDF文件第2页浏览型号TN6729A的Datasheet PDF文件第3页浏览型号TN6729A的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
TN6729A  
NZT6729  
C
E
C
B
TO-226  
C
SOT-223  
B
E
PNP General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 800 mA.  
Sourced from Process 79.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN6729A  
*NZT6729  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
50  
1.0  
8.0  
W
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
125  
125  
Rθ  
°C/W  
JA  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

TN6729A 替代型号

型号 品牌 替代类型 描述 数据表
2N3392 FAIRCHILD

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