Datasheet > TN6729AJ05Z

TN6729AJ05Z

更新时间： 2024-09-20 05:34:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	609K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE, 3 PIN

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TN6729AJ05Z 数据手册

TN6729A

NZT6729

TO-226

SOT-223

PNP General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 800

mA. Sourced from Process 79.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.0

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

TN6729A

*NZT6729

P_D

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Case

1.0

8.0

1.0

8.0

mW/ C

C/W

R_θ

Thermal Resistance, Junction to Ambient

125

R_θ

C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...12

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