生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.77 |
最大集电极电流 (IC): | 1 A | 基于收集器的最大容量: | 12 pF |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TN3019A_00 | FAIRCHILD |
获取价格 |
NPN General Purpose Amplifier | |
TN3019A_NL | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, | |
TN3019AD74Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, | |
TN3019AJ18Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, | |
TN3019A-J18Z | TI |
获取价格 |
1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
TN3020 | TI |
获取价格 |
TN3020 | |
TN3020 | CENTRAL |
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Power Transistors | |
TN3020LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, | |
TN3022 | APITECH |
获取价格 |
Wide Band Low Power Amplifier, 700MHz Min, 1300MHz Max, SM3, SURFACE MOUNT PACKAGE-4 | |
TN3025 | APITECH |
获取价格 |
Wide Band Medium Power Amplifier, 100MHz Min, 400MHz Max, SM3, 4 PIN |