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TN3019A_00

更新时间: 2024-11-08 03:27:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
10页 449K
描述
NPN General Purpose Amplifier

TN3019A_00 数据手册

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TN3019A  
TO-226  
C
B
E
NPN General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 500 mA and  
collector voltages up to 80 V. Sourced from Process 12.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
140  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
7.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN3019A  
PD  
Total Device Dissipation  
Derate above 25 C  
1.0  
8.0  
W
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
50  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  

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