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TN3019A_NL

更新时间: 2024-09-19 21:17:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
10页 443K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE, TO-226AE, 3 PIN

TN3019A_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:TO-226AE, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.52最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-226AE
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

TN3019A_NL 数据手册

 浏览型号TN3019A_NL的Datasheet PDF文件第2页浏览型号TN3019A_NL的Datasheet PDF文件第3页浏览型号TN3019A_NL的Datasheet PDF文件第4页浏览型号TN3019A_NL的Datasheet PDF文件第5页浏览型号TN3019A_NL的Datasheet PDF文件第6页浏览型号TN3019A_NL的Datasheet PDF文件第7页 
TN3019A  
TO-226  
C
B
E
NPN General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switches requiring collector currents to 500 mA and  
collector voltages up to 80 V. Sourced from Process 12.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
140  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
7.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN3019A  
PD  
Total Device Dissipation  
Derate above 25 C  
1.0  
8.0  
W
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
50  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  

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