5秒后页面跳转
TN3011 PDF预览

TN3011

更新时间: 2024-11-23 20:09:31
品牌 Logo 应用领域
APITECH 射频微波
页数 文件大小 规格书
1页 37K
描述
Wide Band Medium Power Amplifier, 5MHz Min, 250MHz Max, SM3, 4 PIN

TN3011 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.17其他特性:I/P POWER-MAX (PEAK)=27DBM
构造:COMPONENT增益:17.5 dB
最大输入功率 (CW):13 dBm最大工作频率:250 MHz
最小工作频率:5 MHz最高工作温度:95 °C
最低工作温度:5 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
最大电压驻波比:2Base Number Matches:1

TN3011 数据手册

  
Available as: TM3011, 4 Pin TO-8 (T4)  
TN3011, 4 Pin Surface Mount (SM3)  
RF AMPLIFIER  
MODEL TM3011  
FP3011, 4 Pin Flatpack (FP4)  
BX3011, Connectorized Housing (H1)  
Features  
Typical Intermodulation Performance at 25 º C  
Second Order Harmonic Intercept Point ....... +49 dBm (Typ.)  
Second OrderTwoTone Intercept Point ........ +43 dBm (Typ.)  
Third OrderTwoTone Intercept Point ............ +36 dBm (Typ.)  
! Medium Gain: 18.5 dB Typical  
! High Output Power: +22 dBm Typical  
! Operating Temp. +5 ºC to + 95 ºC  
! Environmental Screening Available  
Maximum Ratings  
Specifications  
Ambient OperatingTemperature .............. -55ºC to + 100 ºC  
Storage Temperature ............................... -62ºC to + 125 ºC  
CaseTemperature .................................................+ 125 ºC  
DCVoltage ......................................................... + 18 Volts  
Continuous RF Input Power ................................. + 13 dBm  
ShortTerm RF Input Power......50 Milliwatts (1 Minute Max.)  
Maximum Peak Power .................... 0.5 Watt (3 µsec Max.)  
CHARACTERISTIC  
TYPICAL  
Ta= 25 ºC  
5 - 250 MHz  
MIN/MAX  
Ta = +5 ºC to +95 ºC  
5 - 250 MHz  
Frequency  
Gain (dB)  
18.5  
+22  
-20  
17.5 Min.  
+20 Min.  
-17 Max.  
Power @ 1 dB  
Comp. (dBm)  
Reverse  
Isolation (dB)  
VSWR  
In  
Out  
<1.75:1  
<1.5:1  
2.0:1 Max.  
2.0:1 Max.  
Noise Figure (dB)  
Power Vdc  
mA  
<4.2  
5.0 Max.  
+15  
80  
+15  
87 Max.  
Note: Care should always be taken to effectively ground the case of each unit.  
Typical Performance Data  
Gain (dB)  
Reverse Isolation (dB)  
Noise Figure (dB)  
20  
19  
18  
17  
16  
0
5
4
- 10  
- 20  
- 30  
- 40  
3
Start 5 MHz  
Stop 250 MHz  
Stop 250 MHz  
Start 5 MHz  
Stop 250 MHz  
Start 5 MHz  
1 dB Comp. (dBm)  
Input VSWR  
Output VSWR  
23  
22  
21  
20  
2.0  
1.5  
1.0  
2.0  
1.5  
1.0  
19  
Start 5 MHz  
Stop 250 MHz  
Start 5 MHz  
Stop 250 MHz  
Start 5 MHz  
Stop 250 MHz  
Legend  
+ 25 ºC  
+ 95 ºC - - - - - - +5 ºC  
05/10/04  
Spectrum Microwave (Europe) · 2707 Black Lake Place · Philadelphia, Pa. 19154 · PH (215) 464-4000 · Fax (215) 464-4001  
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532  
www.spectrummicrowave.com  

与TN3011相关器件

型号 品牌 获取价格 描述 数据表
TN3012 APITECH

获取价格

Wide Band Low Power Amplifier, 200MHz Min, 450MHz Max, SM3, SURFACE MOUNT PACKAGE-4
TN3012L VISHAY

获取价格

N-Channel 300-V (D-S) MOSFET
TN3012LTA VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.18A I(D), 300V, 1-Element, N-Channel, Silicon, Met
TN3013 APITECH

获取价格

Wide Band Medium Power Amplifier, 10MHz Min, 1700MHz Max, SM3, 4 PIN
TN3015H-6G STMICROELECTRONICS

获取价格

30 A 600 V D2PAK高温晶闸管SCR
TN3015H-6I STMICROELECTRONICS

获取价格

高温30A SCR
TN3015H-6T STMICROELECTRONICS

获取价格

高温30A SCR
TN3017 APITECH

获取价格

Wide Band Low Power Amplifier, 7MHz Min, 250MHz Max, SM3, 4 PIN
TN3018 APITECH

获取价格

Narrow Band Medium Power Amplifier, 2000MHz Min, 2500MHz Max, SM3, 4 PIN
TN3019 CENTRAL

获取价格

Power Transistors