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TN3012LTA PDF预览

TN3012LTA

更新时间: 2024-11-23 13:14:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 41K
描述
Small Signal Field-Effect Transistor, 0.18A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

TN3012LTA 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.65
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:300 V
最大漏极电流 (ID):0.18 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN3012LTA 数据手册

 浏览型号TN3012LTA的Datasheet PDF文件第2页浏览型号TN3012LTA的Datasheet PDF文件第3页浏览型号TN3012LTA的Datasheet PDF文件第4页 
TN3012L  
Vishay Siliconix  
N-Channel 300-V (D-S) MOSFET  
PRODUCT SUMMARY  
V(BR)DSS Min (V)  
rDS(on) Max ()  
VGS(th) (V)  
ID (A)  
12 @ V = 10 V  
GS  
300  
0.8 to 3  
0.18  
20 @ V = 4.5 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 9  
D Low Offset Voltage  
D High-Voltage Drivers: Relays, Solenoids,  
Lamps, Hammers, Displays, Transistors, etc.  
D Secondary Breakdown Free: 320 V D Full-Voltage Operation  
D Telephone Mute Switches, Ringer Circuits  
D Power Supply, Converters  
D Motor Control  
D Low Power/Voltage Driven  
D Low Input and Output Leakage  
D Excellent Thermal Stability  
D Easily Driven Without Buffer  
D Low Error Voltage  
D No High-Temperature  
“Run-Away”  
TO-226AA  
(TO-92)  
Device Marking  
Front View  
1
2
S
G
D
“S” TN  
3012L  
xxyy  
“S” = Siliconix Logo  
xxyy = Date Code  
3
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
300  
"20  
0.18  
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 100_C  
0.14  
A
a
Pulsed Drain Current  
I
0.5  
DM  
T = 25_C  
A
0.8  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
Maximum Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70206  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-1  

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