TN2640K4

更新时间： 2024-11-07 22:42:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	462K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TN2640K4 数据手册

TN2640

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

SO-8

TO-92

DPAK

Die^†

400V

5.0Ω

2.0V

2.0A

TN2640LG

TN2640N3

TN2640K4

TN2640ND

†

MIL visual screening available.

Low Threshold DMOS Technology

Features

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally induced secondary breakdown.

❏

Low threshold — 2.0V max.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Complementary N- and P-channel devices

Applications

Package Options

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

D (TAB)

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

SGD

TO-252

(D-PAK)

TO-92

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

top view

SO-8

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

12/19/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

中文翻译

下载PDF

与TN2640K4相关器件

型号	品牌	获取价格	描述	数据表
TN2640K4-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640LG	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640LG-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640LGP030	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.26A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2640LGP031	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.26A I(D), 400V, 1-Element, N-Channel, Silicon, Met
TN2640N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640N3-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2640N3-GP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor
TN2640N3-GP003	SUPERTEX	获取价格	SMALL SIGNAL, FET
TN2640N3-GP005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor

与TN2640K4相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

20
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

18
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

43
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

TN2640K4

TN2640K4 数据手册

与TN2640K4相关器件

与TN2640K4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TN2640K4

TN2640K4 数据手册

与TN2640K4相关器件

与TN2640K4相关文章

您还可以找

您在本页遇到什么问题？