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TN2640N3-G PDF预览

TN2640N3-G

更新时间: 2024-11-04 12:29:15
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
8页 738K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

TN2640N3-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.83
其他特性:LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (ID):0.22 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:0.74 W最大功率耗散 (Abs):0.74 W
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN2640N3-G 数据手册

 浏览型号TN2640N3-G的Datasheet PDF文件第2页浏览型号TN2640N3-G的Datasheet PDF文件第3页浏览型号TN2640N3-G的Datasheet PDF文件第4页浏览型号TN2640N3-G的Datasheet PDF文件第5页浏览型号TN2640N3-G的Datasheet PDF文件第6页浏览型号TN2640N3-G的Datasheet PDF文件第7页 
TN2640  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
Low threshold (2.0V max.)  
High input impedance  
This low threshold enhancement-mode (normally-off)  
transistor utilizes a vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally induced  
secondary breakdown.  
Low input capacitance  
Fast switching speeds  
Low on-resistance  
Free from secondary breakdown  
Low input and output leakage  
Applications  
Logic level interfaces - ideal for TTL and CMOS  
Solid state relays  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
Battery operated systems  
Photo voltaic drives  
Analog switches  
General purpose line drivers  
Telecom switches  
Ordering Information  
Package Options  
Device  
RDS(ON)  
(max)  
(Ω)  
VGS(th)  
(max)  
(V)  
ID(ON)  
(min)  
(A)  
BVDSS/BVDGS  
(V)  
TO-252 (D-PAK) 8-Lead SOIC  
TO-92  
Die*  
TN2640  
TN2640K4-G  
TN2640LG-G TN2640N3-G TN2640ND  
400  
5.0  
2.0  
2.0  
-G indicates package is RoHS compliant (‘Green’)  
* MIL visual screening available  
Pin Configurations  
DRAIN  
DRAIN  
DRAIN  
DRAIN  
DRAIN  
GATE  
SOURCE  
N/C  
N/C  
SOURCE  
GATE  
Absolute Maximum Ratings  
Parameter  
TO-252 (D-PAK) (K4)  
8-Lead SOIC (LG)  
Value  
BVDSS  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDGS  
Gate-to-source voltage  
±20V  
DRAIN  
Operating and storage temperature  
Soldering temperature*  
-55°C to +150°C  
+300°C  
SOURCE  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
GATE  
TO-92 (N3)  
*
Distance of 1.6mm from case for 10 seconds.  
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com  

TN2640N3-G 替代型号

型号 品牌 替代类型 描述 数据表
TP2540N3-G SUPERTEX

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ZVP0545A DIODES

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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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