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TN2640N3-GP015 PDF预览

TN2640N3-GP015

更新时间： 2024-02-17 08:37:18
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
8页 815K
描述
Small Signal Field-Effect Transistor

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TN2640N3-GP015 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：CYLINDRICAL, O-PBCY-T3Reach Compliance Code：unknown
风险等级：5.61其他特性：LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：400 V
最大漏极电流 (ID)：0.22 A最大漏源导通电阻：5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：15 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
极性/信道类型：N-CHANNEL功耗环境最大值：0.74 W
最大功率耗散 (Abs)：0.74 W表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TN2640N3-GP015 数据手册

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Supertex inc.  
TN2640  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
This low threshold enhancement-mode (normally-off)  
transistor utilizes a vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally induced  
secondary breakdown.  
► Low threshold (2.0V max.)  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
► Free from secondary breakdown  
► Low input and output leakage  
Applications  
► Logic level interfaces - ideal for TTL and CMOS  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Solid state relays  
► Battery operated systems  
► Photo voltaic drives  
► Analog switches  
► General purpose line drivers  
► Telecom switches  
Ordering Information  
Product Summary  
RDS(ON)  
ID(ON)  
VGS(th)  
(max)  
Part Number  
Package Option  
Packing  
BVDSS/BVDGS  
(max)  
(min)  
TN2640K4-G  
TO-252 (D-PAK)  
8-Lead SOIC  
2000/Reel  
2500/Reel  
1000/Bag  
400V  
5.0Ω  
2.0A  
2.0V  
TN2640LG-G  
TN2640N3-G  
3-Lead TO-92  
Pin Configuration  
TN2640N3-G P002  
TN2640N3-G P003  
DRAIN  
DRAIN  
DRAIN  
DRAIN  
DRAIN  
TN2640N3-G P005 3-Lead TO-92  
TN2640N3-G P013  
2000/Reel  
GATE  
SOURCE  
N/C  
N/C  
SOURCE  
GATE  
TN2640N3-G P015  
TO-252 (D-PAK)  
8-Lead SOIC  
For packaged products, -G indicates package is RoHS compliant (‘Green’).  
TO-92 taping specifications and winding styles per EIA-468 Standard.  
Devices in Wafer / Die form are RoHS compliant (‘Green’).  
Refer to Die Specification VF57 for layout and dimensions.  
DRAIN  
GATE  
Absolute Maximum Ratings  
Parameter  
SOURCE  
Value  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage temperature  
BVDSS  
BVDGS  
TO-92  
Typical Thermal Resistance  
±20V  
Package  
θja  
-55°C to +150°C  
TO-252 (D-PAK)  
8-Lead SOIC  
TO-92  
81OC/W  
101OC/W  
132OC/W  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Doc.# DSFP-TN2640  
C071913  
Supertex inc.  
www.supertex.com  
12345678

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