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TN2130K1-G PDF预览

TN2130K1-G

更新时间: 2024-09-19 14:45:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 开关光电二极管晶体管
页数 文件大小 规格书
5页 609K
描述
85mA, 300V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

TN2130K1-G 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:23 weeks风险等级:1.1
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:300 V
最大漏极电流 (ID):0.085 A最大漏源导通电阻:25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.36 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TN2130K1-G 数据手册

 浏览型号TN2130K1-G的Datasheet PDF文件第2页浏览型号TN2130K1-G的Datasheet PDF文件第3页浏览型号TN2130K1-G的Datasheet PDF文件第4页浏览型号TN2130K1-G的Datasheet PDF文件第5页 
Supertex inc.  
TN2130  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
Free from secondary breakdown  
This low threshold, enhancement-mode (normally-off)  
transistor utilizes a vertical DMOS structure and Supertex’s  
well-proven, silicon-gate manufacturing process. This  
combination produces a device with the power handling  
capabilities of bipolar transistors and the high input impedance  
and positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral source-drain diode  
High input impedance and high gain  
Applications  
Logic level interfaces – ideal for TTL and CMOS  
Supertex’s vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very  
low threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds  
are desired.  
Solid state relays  
Battery operated systems  
Photo-voltaic drives  
Analog switches  
General purpose line drivers  
Telecom switches  
Ordering Information  
Product Summary  
RDS(ON)  
Part Number  
Package Option  
Packing  
VGS(th)  
(max)  
BVDSS/BVDGS  
(max)  
TN2130K1-G  
TO-236AB (SOT-23) 3000/Reel  
300V  
25Ω  
2.4V  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
Pin Configuration  
Absolute Maximum Ratings  
Parameter  
DRAIN  
Value  
BVDSS  
BVDGS  
±20V  
Drain-to-source voltage  
Drain-to-gate voltage  
SOURCE  
Gate-to-source voltage  
GATE  
Operating and storage temperature  
-55OC to +150OC  
TO-236AB (SOT-23)  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Product Marking  
W = Code for Week Sealed  
= “Green” Packaging  
N1TW  
Typical Thermal Resistance  
Package  
θja  
203OC/W  
Package may or may not include the following marks: Si or  
TO-236AB (SOT-23)  
TO-236AB (SOT-23)  
Doc.# DSFP-TN2130  
B080913  
Supertex inc.  
www.supertex.com  

TN2130K1-G 替代型号

型号 品牌 替代类型 描述 数据表
TN2130K1 SUPERTEX

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