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TN1504

更新时间: 2024-11-11 03:27:07
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超科 - SUPERTEX /
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2页 311K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

TN1504 数据手册

 浏览型号TN1504的Datasheet PDF文件第2页 
TN1504/TN1506/TN1510  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
These low threshold enhancement-mode (normally-off)  
transistors utilize a vertical DMOS structure and Supertex’s  
well-proven silicon-gate manufacturing process. This combi-  
nationproducesdeviceswiththepowerhandlingcapabilities  
of bipolar transistors, and with the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, these devices are free  
from thermal runaway and thermally-induced secondary  
breakdown.  
► Low threshold - 2.0V max.  
► High input impedance  
► Low input capacitance - 50pF typical  
► Fast switching speeds  
► Low on resistance  
► Free from secondary breakdown  
► Low input and output leakage  
► Complementary N- and P-channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very  
lowthresholdvoltage,highbreakdownvoltage,highinputim-  
pedance, low input capacitance, and fast switching speeds  
are desired.  
Applications  
► Logic level interfaces – ideal for TTL and CMOS  
► Solid state relays  
► Battery operated systems  
► Photo voltaic drives  
► Analog switches  
► General purpose line drivers  
Telecom switches  
Absolute Maximum Ratings  
Parameter  
Value  
BVDSS  
BVDGS  
20V  
Drain-to-source voltage  
Drain-to-source voltage  
Drain-to-source voltage  
Operating and storage temperature  
-55OC to +150OC  
Absolute Maximum Ratings are those values beyond which damage to the  
device may occur. Functional operation under these conditions is not implied.  
Continuous operation of the device at the absolute rating level may affect  
device reliability. All voltages are referenced to device ground.  
Ordering Information  
Order Number  
RDS(ON)  
(max)  
VGS(th)  
(max)  
ID(ON)  
(min)  
Device  
BVDSS/ BVDGS  
Die*  
TN1504  
TN1506  
TN1504NW  
TN1506NW  
TN1510NW  
40V  
60V  
3.0Ω  
3.0Ω  
3.0Ω  
2.0V  
2.0V  
2.0V  
2.0A  
2.0A  
2.0A  
TN1510  
100V  
* Die in wafer form.  
1

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