TN1506NJ

更新时间： 2024-11-11 13:00:43

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	29K
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TN1506NJ 数据手册

TN1506/TN1510

TN1506

TN1510

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

BV_DGS

(max)

(min)

Die*

60V

3.0Ω

2.0V

TN1506NW

TN1510NW

100V

* Die in wafer form.

Features

Low Threshold DMOS Technology

❏ Low threshold — 2.0V max.

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

❏ High input impedance

❏ Low input capacitance — 50pF typical

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

-55°C to +150°C

10/03/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN1506NJ相关器件

型号	品牌	获取价格	描述	数据表
TN1506NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN150A	TOPSTEK	获取价格	Topstek Current Transducers
TN1510	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN1510NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN1515-600B	STMICROELECTRONICS	获取价格	15 A standard SCR
TN1515-600B-TR	STMICROELECTRONICS	获取价格	15 A standard SCR
TN15P100RGE	OHMITE	获取价格	20 and 15 Watt TO-220 Package Thick and Thin Film
TN15P10K0GE	OHMITE	获取价格	20 and 15 Watt TO-220 Package Thick and Thin Film
TN15P10R0GE	OHMITE	获取价格	20 and 15 Watt TO-220 Package Thick and Thin Film
TN15P1K00GE	OHMITE	获取价格	20 and 15 Watt TO-220 Package Thick and Thin Film

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