TN1510NW

更新时间： 2024-11-11 03:27:07

品牌	Logo	应用领域
超科 - SUPERTEX		晶体晶体管功率场效应晶体管开关
页数	文件大小	规格书
2页	29K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN1510NW 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DIE
包装说明：	UNCASED CHIP, X-XUUC-N	Reach Compliance Code：	compliant
风险等级：	5.76	Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏源导通电阻：	3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	X-XUUC-N
元件数量：	1	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	UNSPECIFIED
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TN1510NW 数据手册

TN1506/TN1510

TN1506

TN1510

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

BV_DGS

(max)

(min)

Die*

60V

3.0Ω

2.0V

TN1506NW

TN1510NW

100V

* Die in wafer form.

Features

Low Threshold DMOS Technology

❏ Low threshold — 2.0V max.

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

❏ High input impedance

❏ Low input capacitance — 50pF typical

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

-55°C to +150°C

10/03/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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