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TMS46100-60DJ PDF预览

TMS46100-60DJ

更新时间： 2024-11-12 20:06:35
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 380K
描述
4MX1 FAST PAGE DRAM, 60ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20

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TMS46100-60DJ 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOJ包装说明：SOJ, SOJ20/26,.34
针数：20Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.02
风险等级：5.56访问模式：FAST PAGE
最长访问时间：60 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：SEPARATEJESD-30 代码：R-PDSO-J20
长度：17.145 mm内存密度：4194304 bit
内存集成电路类型：FAST PAGE DRAM内存宽度：1
功能数量：1端口数量：1
端子数量：20字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：4MX1输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：SOJ
封装等效代码：SOJ20/26,.34封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V认证状态：Not Qualified
刷新周期：1024座面最大高度：3.76 mm
自我刷新：NO最大待机电流：0.0003 A
子类别：DRAMs最大压摆率：0.07 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：J BEND端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.62 mmBase Number Matches：1

TMS46100-60DJ 数据手册

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TMS44100, TMS44100P, TMS46100, TMS46100P  
4194304-WORD BY 1-BIT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMHS561A – MARCH 1995 – REVISED JUNE 1995  
DGA PACKAGE  
(TOP VIEW)  
DJ PACKAGE  
(TOP VIEW)  
Organization . . . 4194304 × 1  
Single 5 V Power Supply, for TMS44100/P  
(±10% Tolerance)  
D
W
RAS  
NC  
1
2
3
4
5
26  
25  
24  
23  
22  
V
Q
CAS  
NC  
A9  
D
W
RAS  
NC  
1
2
3
4
5
26  
25  
24  
23  
22  
V
SS  
Q
CAS  
NC  
A9  
SS  
Single 3.3 V Power Supply, for TMS46100/P  
(±10% Tolerance)  
Low Power Dissipation (TMS46100P only)  
– 200-µA CMOS Standby  
– 200-µA Self Refresh  
A10  
A10  
– 300-µA Extended-Refresh Battery  
Backup  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
10  
11  
12  
13  
10  
11  
12  
13  
Performance Ranges:  
ACCESS ACCESS ACCESS  
TIME TIME TIME OR WRITE  
(t (t  
READ  
V
V
CC  
CC  
)
)
(t  
AA  
)
CYCLE  
(MIN)  
RAC CAC  
(MAX)  
60 ns  
70 ns  
80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
’4x100/P-60  
’4x100/P-70  
’4x100/P-80  
110 ns  
130 ns  
150 ns  
PIN NOMENCLATURE  
A0–A10  
CAS  
D
Address Inputs  
Column-Address Strobe  
Enhanced Page-Mode Operation for Faster  
Memory Access  
Data In  
NC  
No Connection  
Data Out  
CAS-Before-RAS (CBR) Refresh  
Q
RAS  
W
Row-Address Strobe  
Write Enable  
5-V or 3.3-V Supply  
Ground  
Long Refresh Period  
– 1024-Cycle Refresh in 16 ms  
– 128 ms (Max) for Low-Power,  
Self-Refresh Version (TMS4x100P)  
V
CC  
V
SS  
3-State Unlatched Output  
Texas Instruments EPIC CMOS Process  
Operating Free-Air Temperature Range  
0°C to 70°C  
description  
The TMS4x100 series are high-speed,  
4194304-bit dynamic random-access memories,  
organized as 4194304 words of one bit each. The  
TMS4x100P series are high-speed, low-power,  
self-refresh with extended-refresh, 4194304-bit  
dynamic random-access memories, organized as  
4194304 words of one bit each. Both series  
SELF-REFRESH  
POWER  
SUPPLY  
REFRESH  
CYCLES  
DEVICE  
BATTERY  
BACKUP  
TMS44100  
TMS44100P  
TMS46100  
TMS46100P  
5 V  
5 V  
—
YES  
—
1024 in 16 ms  
1024 in 128 ms  
1024 in 16 ms  
1024 in 128 ms  
3.3 V  
3.3 V  
employ state-of-the-art EPIC  
(Enhanced  
YES  
Performance Implanted CMOS) technology for  
high performance, reliability, and low voltage.  
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines  
are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.  
The TMS4x100 and TMS4x100P are offered in a 20-/26-lead plastic surface-mount small-outline (TSOP)  
package(DGAsuffix)anda300-mil20-/26-leadplasticsurface-mountSOJpackage(DJsuffix). Bothpackages  
are characterized for operation from 0°C to 70°C.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1995, Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in the sampling or  
preproduction phase of development. Characteristic data and other  
specifications are subject to change without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...25

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与TMS46100-60DJ相关器件

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TMS46100-70DGA TI

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 		4MX1 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, TSOP-26/20
TMS46100-70DGB TI

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 		4MX1 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, REVERSE, TSOP-26/20
TMS46100-70SD TI

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 		IC 4M X 1 FAST PAGE DRAM, 70 ns, PZIP20, PLASTIC, ZIP-20, Dynamic RAM
TMS46100-80DGA TI

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 		4MX1 FAST PAGE DRAM, 80ns, PDSO20, PLASTIC, TSOP-26/20
TMS46100-80DGB TI

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 		4MX1 FAST PAGE DRAM, 80ns, PDSO20, PLASTIC, REVERSE, TSOP-26/20
TMS46100-80DJ TI

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 		4MX1 FAST PAGE DRAM, 80ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS46100-80SD TI

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 		4MX1 FAST PAGE DRAM, 80ns, PZIP20, PLASTIC, ZIP-20
TMS46100P TI

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 		4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS46100P-10DGB TI

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 		4MX1 FAST PAGE DRAM, 100ns, PDSO20, PLASTIC, REVERSE, TSOP-26/20
TMS46100P-10DJ TI

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 		4MX1 FAST PAGE DRAM, 100ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20

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