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TMS27C128-2JE4 PDF预览

TMS27C128-2JE4

更新时间: 2024-11-25 14:36:23
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器电动程控只读存储器内存集成电路
页数 文件大小 规格书
14页 142K
描述
16KX8 UVPROM, 200ns, CDIP28, 0.600 INCH, WINDOWED, CERAMIC, DIP-28

TMS27C128-2JE4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:WDIP, DIP28,.6
针数:28Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.61
风险等级:5.42最长访问时间:200 ns
I/O 类型:COMMONJESD-30 代码:R-GDIP-T28
内存密度:131072 bit内存集成电路类型:UVPROM
内存宽度:8功能数量:1
端子数量:28字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX8输出特性:3-STATE
封装主体材料:CERAMIC, GLASS-SEALED封装代码:WDIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE, WINDOW并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
编程电压:13 V认证状态:Not Qualified
座面最大高度:4.907 mm最大待机电流:0.00025 A
子类别:EPROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

TMS27C128-2JE4 数据手册

 浏览型号TMS27C128-2JE4的Datasheet PDF文件第2页浏览型号TMS27C128-2JE4的Datasheet PDF文件第3页浏览型号TMS27C128-2JE4的Datasheet PDF文件第4页浏览型号TMS27C128-2JE4的Datasheet PDF文件第5页浏览型号TMS27C128-2JE4的Datasheet PDF文件第6页浏览型号TMS27C128-2JE4的Datasheet PDF文件第7页 
TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY  
TMS27PC128 131 072-BIT PROGRAMMABLE READ-ONLY MEMORY  
SMLS128E–OCTOBER 1984–REVISED JANUARY 1993  
J AND N PACKAGES  
This Data Sheet is Applicable to All  
(TOP VIEW)  
TMS27C128s and TMS27PC128s Symbolized  
with Code “B” as Described on Page 12.  
V
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
GND  
V
CC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
PP  
Organization . . . 16K × 8  
PGM  
A13  
A8  
A9  
A11  
G
2
Single 5-V Power Supply  
3
4
Pin Compatible With Existing 128K MOS  
ROMs, PROMs, and EPROMs  
5
6
All Inputs/Outputs Fully TTL Compatible  
7
A10  
E
8
Max Access/Min Cycle Times  
9
V
± 10%  
CC  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
’27C128-12  
120 ns  
’27C/PC128-15 150 ns  
’27C/PC128-20 200 ns  
’27C/PC128-25 250 ns  
Power Saving CMOS Technology  
Very High-Speed SNAP! Pulse Programming  
3-State Output Buffers  
FM PACKAGE  
(TOP VIEW)  
400-mV Minimum DC Noise Immunity With  
Standard TTL Loads  
4
5
3
2
1
32 31 30  
29  
Latchup Immunity of 250 mA on All Input  
and Output Lines  
A6  
A5  
A4  
A3  
A2  
A8  
A9  
28  
27  
26  
25  
24  
23  
22  
21  
6
7
8
9
A11  
NC  
G
A10  
E
Low Power Dissipation (V  
= 5.25 V)  
CC  
– Active . . . 158 mW Worst Case  
– Standby . . . 1.4 mW Worst Case  
(CMOS Input Levels)  
A1 10  
A0 11  
NC 12  
PEP4 Version Available With 168-Hour  
Burn-In and Choices of Operating  
Temperature Ranges  
DQ7  
DQ6  
DQ0  
13  
14 15 16 17 18 19 20  
128K EPROM Available With MIL-STD-883C  
Class B High-Reliability Processing  
(SMJ27C128)  
description  
PIN NOMENCLATURE  
The TMS27C128 series are 131 072-bit,  
ultraviolet-light erasable, electrically  
programmable read-only memories.  
A0–A13  
E
G
GND  
NC  
NU  
Address Inputs  
Chip Enable/Powerdown  
Output Enable  
Ground  
No Connection  
Make No External Connection  
Program  
The TMS27PC128 series are 131 072-bit, one  
time electrically programmable read-only  
memories.  
PGM  
DQ0–DQ7 Inputs (programming)/Outputs  
V
CC  
V
PP  
5-V Power Supply  
12-13 V Programming Power Supply  
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS  
77251–1443  

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