Datasheet > TMD1414-1L

TMD1414-1L

更新时间： 2024-09-16 19:51:43

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器射频微波功率放大器
页数	文件大小	规格书
2页	29K
描述
RF/Microwave Amplifier, 14000 MHz - 14500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 2-11E1B, 9 PIN

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中文翻译

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技术参数
数据手册

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TMD1414-1L 技术参数

生命周期：	Obsolete	包装说明：	FLNG,.53"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.84
构造：	COMPONENT	增益：	26 dB
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	14500 MHz	最小工作频率：	14000 MHz
最高工作温度：	100 °C	最低工作温度：	-60 °C
封装主体材料：	METAL	封装等效代码：	FLNG,.53"H.SPACE
电源：	7 V	射频/微波设备类型：	NARROW BAND MEDIUM POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	1200 mA
Base Number Matches：	1

TMD1414-1L 数据手册

MICROWAVE POWER MMIC AMPLIFIER

TMD1414-1L

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

CHARACTERISTICS

DRAIN SUPPLY VOLTAGE

GATE SUPPLY VOLTAGE

INPUT POWER

SYMBOL

UNIT

RATINGS

VDD

VGG

-10

dBm

POWER DISSIPATION

FLANGE TEMPERATURE

STORAGE TEMPERATURE

°C

-60 to +100

-60 to +175

Tstg

°C

RF PERFORMANCE SPECIFICATIONS (Ta=25°C)

CHARACTERISTICS

SYMBOL

CONDITION

UNIT

MIN.

14.0

31.2

TYP.

−

MAX.

Operating Frequency

Output Power at 1dB

Compression point

Power Gain at 1dB

Compression point

GHz

dBm

14.5

P1dB

VDD=7V

32.0

−

VGG=

G1dB

26.0

27.0

−

-4.0/ -4.5/ -5.0V

Drain Current

IDD

IM3

1.00

-29

1.20

−

3rd Order Intermodulation

Distortion

Po=25.5dBm (SCL)

dBc

-28

−

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any

infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or

patent rights of TOSHIBA or others.

The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of

equipment incorporating this product.

Revised Sept. 2001

中文翻译

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