Datasheet > TMD1414-2C

TMD1414-2C

更新时间： 2024-11-09 03:27:15

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器微波
页数	文件大小	规格书
2页	44K
描述
MICROWAVE POWER MMIC AMPLIFIER

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中文翻译

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技术参数
数据手册

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TMD1414-2C 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLNG,.53"H.SPACE	Reach Compliance Code：	unknown
风险等级：	5.88	构造：	MODULE
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	14500 MHz	最小工作频率：	13750 MHz
封装主体材料：	CERAMIC	封装等效代码：	FLNG,.53"H.SPACE
电源：	7,-5 V	射频/微波设备类型：	NARROW BAND MEDIUM POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	1800 mA

TMD1414-2C 数据手册

MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

TMD1414-2C

FEATURES

n HIGH POWER

P1dB=34.5dBm at 13.75GHz to 14.5GHz

n HIGH GAIN

nBROAD BAND INTERNALLY MATCHED

nHERMETICALLY SEALED PACKAGE

G1dB=26.0dB at 13.75GHz to 14.5GHz

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain Supply Voltage

SYMBOL

UNIT

RATING

VDD

VGG

-10

Gate Supply Voltage

Input Power

dBm

Flange Temperature

Storage Temperature

-40 ~ +90

-65 ~ +175

Tstg

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Operating Frequency

Output Power at 1dB Gain

Compression Point

1dB Gain Compression

Point

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

GHz 13.75

dBm 32.0 34.5

14.5

P1dB

G1dB

21.0 26.0

VDD=7V

VGG=-5V

Gain Flatness

IDD

±1.0

1.8

Drain Current

1.4

Power Added Efficiency

hadd

uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Mar.2006

中文翻译

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