TM497BBK32H, TM497BBK32I 4194304 BY 32-BIT
TM893CBK32H, TM893CBK32I 8388608 BY 32-BIT
DYNAMIC RAM MODULES
SMMS675A – MARCH 1997 – REVISED APRIL 1997
Organization
Presence Detect
– TM497BBK32H/I: 4194304 x 32
– TM893CBK32H/I: 8388608 x 32
Performance Ranges:
ACCESS ACCESS ACCESS
READ
Single 5-V Power Supply (±10% Tolerance)
TIME TIME TIME
OR
WRITE
t
t
t
CAC
RAC
AA
72-Pin Single-In-Line Memory Module
(SIMM) for Use With Sockets
CYCLE
(MIN)
(MAX)
’497BBK32H/I-50 50 ns
’497BBK32H/I-60 60 ns
’497BBK32H/I-70 70 ns
(MAX)
25 ns
30 ns
35 ns
(MAX)
13 ns
TM497BBK32H/I – Uses Eight 16M-Bit
Dynamic Random-Access Memory (DRAM)
Devices in Plastic Small-Outline J-Lead
(SOJ) Packages
90 ns
110 ns
130 ns
15 ns
18 ns
’893CBK32H/I-50 50 ns
’893CBK32H/I-60 60 ns
’893CBK32H/I-70 70 ns
25 ns
30 ns
35 ns
13 ns
15 ns
18 ns
90 ns
110 ns
130 ns
TM893CBK32H/I – Uses Sixteen 16M-Bit
DRAMs in Plastic SOJ Packages
Long Refresh Period
32 ms (2 048 Cycles)
Low Power Dissipation
Operating Free-Air Temperature Range
All Inputs, Outputs, Clocks Fully
TTL-Compatible
0°C to 70°C
†
Gold-Tabbed Version Available:
3-State Output
TM497BBK32H, TM893CBK32H
Common CAS Control for Eight Common
Data-In and Data-Out Lines in Four Blocks
Tin-Lead (Solder-) Tabbed Version
Available: TM497BBK32I, TM893CBK32I
Enhanced Page Mode Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
description
The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4 ×
4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight
TMS417400ADJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages
mounted on a substratewithdecouplingcapacitors. TheTMS417400ADJisdescribedintheTMS417400Adata
sheet (literature number SMKS889).
The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The
TM497BBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
The TM893CBK32H/I is a 32M-byte DRAM organized as 4 8388608 × 8 bits in a 72-pin leadless SIMM. The
SIMM is composed of sixteen TMS417400ADJ, 4194304 × 4-bit DRAMs.
The TM893CBK32H/I SIMM is available in the double-sided BK leadless module for use with sockets. The
TM893CBK32H/I features RAS access times of 50, 60, and 70 ns. This device is characterized for operation
from 0°C to 70°C.
operation
The TM497BBK32H/I operates as eight TMS417400ADJs connected as shown in the functional block diagram
and in Table 1. The common I/O feature dictates the use of early write cycles to prevent contention on D and
Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443