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TM497FBK32H-50 PDF预览

TM497FBK32H-50

更新时间： 2024-11-12 15:54:39
品牌 Logo 应用领域
德州仪器 - TI 动态存储器内存集成电路
页数 文件大小 规格书
12页 168K
描述
4MX32 EDO DRAM MODULE, 50ns, QMA72, SIMM-72

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TM497FBK32H-50 技术参数

生命周期：Obsolete零件包装代码：QMA
包装说明：SIMM, SSIM72针数：72
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.84
访问模式：FAST PAGE WITH EDO最长访问时间：50 ns
其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型：COMMON
JESD-30 代码：R-XQMA-N72内存密度：134217728 bit
内存集成电路类型：EDO DRAM MODULE内存宽度：32
功能数量：1端口数量：1
端子数量：72字数：4194304 words
字数代码：4000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：4MX32输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：SIMM
封装等效代码：SSIM72封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：5 V
认证状态：Not Qualified刷新周期：2048
座面最大高度：25.4 mm自我刷新：NO
最大待机电流：0.008 A子类别：DRAMs
最大压摆率：1.04 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：1.27 mm端子位置：QUAD
Base Number Matches：1

TM497FBK32H-50 数据手册

 浏览型号TM497FBK32H-50的Datasheet PDF文件第2页浏览型号TM497FBK32H-50的Datasheet PDF文件第3页浏览型号TM497FBK32H-50的Datasheet PDF文件第4页浏览型号TM497FBK32H-50的Datasheet PDF文件第5页浏览型号TM497FBK32H-50的Datasheet PDF文件第6页浏览型号TM497FBK32H-50的Datasheet PDF文件第7页 
TM497FBK32, TM497FBK32S 4194304 BY 32-BIT  
TM893GBK32, TM893GBK32S 8388608 BY 32-BIT  
EXTENDED DATA OUT DYNAMIC RAM MODULES  
SMMS668 – NOVEMBER 1996  
Organization  
Presence Detect  
– TM497FBK32/S: 4 194 304 x 32  
– TM893GBK32/S: 8 388 608 x 32  
Performance Ranges:  
ACCESS ACCESS ACCESS EDO  
TIME  
TIME  
TIME  
CYCLE  
Single 5-V Power Supply (±10% Tolerance)  
t
t
t
t
RAC  
AA  
CAC  
HPC  
72-Pin Single-In-Line Memory Module  
(SIMM) for Use With Sockets  
(MAX)  
’497FBK32/S-60 60 ns  
’497FBK32/S-70 70 ns  
’497FBK32/S-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MIN)  
25 ns  
30 ns  
35 ns  
TM497FBK32/S – Uses Eight 16M-Bit  
Dynamic Random-Access Memories  
(DRAMs) in Plastic Small-Outline J-Lead  
(SOJ) Packages  
’893GBK32/S-60 60 ns  
’893GBK32/S-70 70 ns  
’893GBK32/S-80 80 ns  
30 ns  
35 ns  
40 ns  
15 ns  
18 ns  
20 ns  
25 ns  
30 ns  
35 ns  
TM893GBK32/S – Uses Sixteen 16M-Bit  
DRAMs in Plastic SOJ Packages  
Low Power Dissipation  
Long Refresh Period  
32 ms (2 048 Cycles)  
Operating Free-Air Temperature Range  
0°C to 70°C  
All Inputs, Outputs, Clocks Fully  
TTL-Compatible  
†
Gold-Tabbed Version Available:  
TM497FBK32, TM893GBK32  
3-State Output  
Tin-Lead (Solder-) Tabbed Version  
Available: TM497FBK32S, TM893GBK32S  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines in Four Blocks  
Extended Data Out (EDO) Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
description  
The TM497FBK32 is a 16M-byte dynamic random-access memory (DRAM) organized as four times  
4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight  
TMS417409DJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages  
mounted on a substrate with decoupling capacitors. The TMS417409DJ is described in the TMS416409,  
TMS417409 data sheet (literature number SMKS884).  
The TM497FBK32 SIMM is available in the single-sided BK leadless module for use with sockets. The  
TM497FBK32 features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for operation  
from 0°C to 70°C.  
The TM893GBK32/S is a 32M-byte DRAM organized as four times 8388608 × 8 bits in a 72-pin leadless SIMM.  
The SIMM is composed of sixteen TMS417409DJ 4194304 × 4-bit DRAMs.  
The TM893GBK32/S SIMM is available in the double-sided BK leadless module for use with sockets. The  
TM893GBK32/S features RAS access times of 60 ns, 70 ns, and 80 ns. This device is characterized for  
operation from 0°C to 70°C.  
operation  
The TM497FBK32/S operates as eight TMS417409DJs connected as shown in Figure 1 and in Table 1. The  
common I/O feature dictates the use of early write cycles to prevent contention on D and Q.  
The TM893GBK32/S operates as sixteen TMS417409DJs connected as shown in Figure 2 and in Table 2. The  
common I/O feature dictates the use of early write cycles to prevent contention on D and Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...12

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